• The bipolar phototransistor resembles a bipolar transistor that has extra large p-type semiconductor region that is open for light exposure.
• When photons from a light source collide with electrons within the p-type
semiconductor, they gain enough energy to jump across the pn-junction energy barrier provided the photons are of the right frequency/energy.
• As electrons jump from the p-region into the lower n-region, holes are created in the ptype semiconductor.
• The extra electrons injected into the lower ntype slab are drawn toward the positive terminal of the battery, while electrons from the negative terminal of the battery are draw into the upper n-type semiconductor and across the np junction, where they combine with the holes, the net result is an electrons current that flows from the emitter to the collector.
• When photons from a light source collide with electrons within the p-type
semiconductor, they gain enough energy to jump across the pn-junction energy barrier provided the photons are of the right frequency/energy.
• As electrons jump from the p-region into the lower n-region, holes are created in the ptype semiconductor.
• The extra electrons injected into the lower ntype slab are drawn toward the positive terminal of the battery, while electrons from the negative terminal of the battery are draw into the upper n-type semiconductor and across the np junction, where they combine with the holes, the net result is an electrons current that flows from the emitter to the collector.
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