Tuesday, 1 July 2014

The NAND, NOR, and NXOR Gates

Negation is quite useful. In addition to the three two-input gates already
discussed (AND, OR, and XOR), three more are commonly available. These
are identical to AND, OR, and XOR, except that the gate output has been negated. These gates are called the NAND (“not AND”), NOR (“not OR”),
and NXOR (“not exclusive OR”) gates. Their symbols are just the symbols
of the unnegated gate with a small circle drawn at the output:


Negation (NOT Gate)

An even simpler gate is the NOT gate. It has only one input and one output.
The output is always the opposite (or negation) of the input.


The OR and XOR Gates

The OR gate is also a two-input, single-output gate. Unlike the AND gate,
the output is 1 when one input, or the other, or both are 1. The OR gate
output is 0 only when both inputs are 0.

A related gate is the XOR, or eXclusive OR gate, in which the output is 1
when one, and only one, of the inputs is 1. In other words, the XOR output
is 1 if the inputs are different.

The AND Gate

A basic AND gate consists of two inputs and an output. If the two inputs
are A and B, the output (often called Q) is “on” only if both A and B are
also “on.”
In digital electronics, the on state is often represented by a 1 and the off state
by a 0. The relationship between the input signals and the output signals is
often summarized in a truth table, which is a tabulation of all possible inputs
and the resulting outputs. For the AND gate, there are four possible


Gates

Gates are the fundamental building blocks of digital logic circuitry. These
devices function by “opening” or “closing” to admit or reject the passage of
a logical signal. From only a handful of basic gate types (AND, OR, XOR,
and NOT), a vast array of gating functions can be created.

Metric Prefixes

1 Giga (G) = 1 billion = 1,000,000,000
1 Mega (M) = 1 million = 1,000,000
1 kilo (k) = 1 thousand = 1,000
1 centi (c) = 1 one-hundredth = 0.01
1 milli (m) = 1 one-thousandth = 0.001
1 micro (u) = 1 one-millionth = 0.000001
1 pico (p) = 1 one-trillionth = 0.000000000001

1 Tera (T) = 1trillion = 1,000,000,000,000
1 hecto (h) = ten = 10
1 deci (d) = 1 tenth = 0.1
1 nano (n) = 1 one-billionth = 0.000000001

N-Type Silicon and P-Type Silicon

N-Type Silicon

• Pentavalent impurities such as phosphorus, arsenic, antimony, and bismuth have 5 valence electrons.
• When phosphorus impurity is added to Si, every phosphorus atom’s four valence electrons are locked up in covalent bond with valence electrons of four neighboring Si atoms. However, the 5th valence electron of phosphorus atom does not find a binding electron and thus remains free to float. When a voltage is applied across the silicon-phosphorus mixture, free electrons migrate toward the positive voltage end.
• When phosphorus is added to Si to yield the above effect, we say that Si is doped with phosphorus. The resulting mixture is called N-type silicon (N: negative charge carrier silicon).
• The pentavalent impurities are referred to as donor impurities.


P-Type Silicon

• Trivalent impurities e.g., boron, aluminum, indium, and gallium  have 3 valence
electrons.
• When boron is added to Si, every boron atom’s three valence electrons are locked up in covalent bond with valence electrons of three neighboring Si atoms. However, a vacant spot “hole” is created within the covalent bond between one boron atom and a neighboring Si atom. The holes are considered to be positive charge carriers.
When a voltage is applied across the silicon-boron mixture, a hole moves toward the negative voltage end while a neighboring electron fills in its place.
• When boron is added to Si to yield the above effect, we say that Si is doped with boron. The resulting mixture is called P-type silicon (P: positive charge carrier silicon).
• The trivalent impurities are referred to as acceptor impurities
• The hole of boron atom points towards the negative terminal.
• The electron of neighboring silicon atom points toward
positive terminal.
• The electron from neighboring silicon atom falls into the boron atom filling the hole in boron atom and creating a “new” hole in the silicon atom.
• It appears as though a hole moves toward the negative terminal!



How Phototransistor Works

• The bipolar phototransistor resembles a bipolar transistor that has extra large p-type semiconductor region that is open for light exposure.
• When photons from a light source collide with electrons within the p-type
semiconductor, they gain enough energy to jump across the  pn-junction energy barrier provided the photons are of the right frequency/energy.
• As electrons jump from the p-region into the lower n-region, holes are created in the ptype semiconductor.
• The extra electrons injected into the lower ntype slab are drawn toward the positive terminal of the battery, while electrons from the negative terminal of the battery are draw into the upper n-type semiconductor and across the  np junction, where they combine with the holes, the net result is an electrons current that flows from the emitter to the collector.

Phototransistor

• Phototransistor is a light sensitive transistor.
• In one common type of phototransistor, the base lead of a BJT is replaced by a light sensitive surface.
• When the light sensitive surface @ the base is kept in darkness, the collector-emitter pair of the BJT does not conduct.
• When the light sensitive surface @ the base is exposed to light, a small amount of current flows from the base to the emitter. The small base-emitter current controls the larger collector-emitter current.
• Alternatively, one can also use a field-effect phototransistor (Photo FET).
• In a photo FET, the light exposure generates a gate voltage which controls a
drain-source current.

Solar Cell

• Solar cells are photodiodes with very large surface areas.
• Compared to usual photodiodes, the large surface area in photodiode of a
solar cell yields
– a device that is more sensitive to incoming light.
– a device that yields more power (larger current/volts).
• Solar cells yield more power.
• A single solar cell may provide up to 0.5V that can supply 0.1A  when
exposed to bright light.

How Photodiode Works

• Photodiode: A thin n-type semiconductor sandwiched with a thicker p-type semiconductor.
• N-side is cathode, p-side is anode.
• Upon illumination, a # of photons pass from the n-side and into the p-side of
photodiode.
– Some photons making it into p-side collide with bound electrons within psemiconductor, ejecting them and creating holes.
– If these collisions are close to the pninterface, the ejected electrons cross the
junction, yielding extra electrons on the n-side and extra holes on the p-side.
– Segregation of +ve and  -ve charges leads to a potential difference across the
pn-junction.
– When a wire is connected between the cathode and anode, a conventionally
positive current flow from the anode to cathode

Photodiode

• Photodiode is a 2 lead semiconductor device that transforms light energy to electric current.
• Suppose anode and cathode of a photodiode are wired to a current meter.
– When photodiode is placed in dark, the current meter displays zero current flow.
– When the photodiode is expose to light, it acts a a current source, causing current flow from cathode to anode of photodiode through the current meter.
• Photodiodes have very linear light v/s current characteristics.
– Commonly used as light meters in cameras.
• Photodiodes often have built-in lenses and optical filters.
• Response time of a photodiode slows with increasing surface area.
• Photodiodes are more sensitive than photoresistor.

How Photoresistor Works

• Special semiconductor crystal, such as cadmium sulfide or lead sulfide is used to make
photoresistors.
• When this semiconductor is placed in dark, electrons within its structure resist flow through
the resistor because they are too strongly bound to the crystal’s atoms.
• When this semiconductor is illuminated, incoming photons of light collide with the bound
electrons, stripping them from the binding atom, thus creating holes in the process.
• Liberated electrons contribute to the current flowing through the device.

Photoresistors

• Light sensitive variable resistors.
• Its resistance depends on the intensity of light incident upon it.
– Under dark condition, resistance is quite high (M: called dark resistance).
– Under bright condition, resistance is lowered (few hundred ).
• Response time:
– When a photoresistor is exposed to light, it takes a few milliseconds, before it
lowers its resistance.
– When a photoresistor experiences removal of light, it may take a few seconds
to return to its dark resistance.
• Some photoresistors respond better to light that contains photons within a particular wavelength of spectrum.
– Example: Cadmium-sulfide photoresistos respond to light within 400-800nm range.
– Example: Lead-sulfide photoresistos respond to infrared light.

How LED Works

• The light-emitting section of an LED is made by joining n-type and p-type semiconductors
together to form a pn junction.
• When the  pn junction is forward-biased, electrons in the n side are excited across the  pn
junction and into the p side, where they combine with holes.
• As the electrons combine with the holes, photons are emitted.
• The  pn-junction section of an LED is encased in an epoxy shell that is  doped with light
scattering particles to diffuse light and make the LED appear brighter.
• Often a reflector placed beneath the semiconductor is used to direct the light upward.

7-Segment LED Display

• Used for displaying numbers and other characters.
• 7 individual LEDs are used to make up the display.
• When a voltage is applied across one of the LEDs, a portion of the 8 lights up.
• Unlike liquid crystal displays (LCD), 7-segment LED displays tend to be more
rugged, but they also consume more power.

Tricolor LED

• Two LEDs placed in parallel facing opposite directions.
• One LED is red or orange, the other is green.
• Current flow in one direction turns one LED ON while the other remains OFF due
to reverse bias.
• Current flow in the other direction turns the first LED OFF and the second LED ON.
• Rapid switching of current flow direction will alternatively turn the two LEDs ON
giving yellow light.
• Used as a polarity indicator.
• Maximum voltage rating: 3V
• Operating range: 10 to 20mA

Blinking LED

• Contain a miniature integrated circuit that causes LED to flash from 1 to 6 times/second.
• Typical usage: indicator flashers. May also be used as simple oscillators.

Visible-Light LED

• Inexpensive and durable.
• Typical usage: as indicator lights.
• Common colors: green (~565nm), yellow (~585nm), orange (~615nm), and red
(~650nm).
• Maximum forward voltage:  1.8V.
• Typical operating currents: 1 to 3mA.
• Typical brightness levels: 1.0 to 3.0mcd/1mA to 3.0mcd /2mA.
• High-brightness LEDs exist.
– Used in high-brightness flashers (e.g., bicycle flashers).

LED

• 2 lead semiconductor device.
• Light emitting PN-junction diode.
– Visible or infrared light.
• Has polarity.
• Recall diodes act as a one way gate to current flow.
– A forward-biased PN-junction diode allows current flow from anode to cathode.
• An LED conducts and emits light when its anode is made more positive (approx.
1.4V) than its cathode.
– With reverse polarity, LED stops conducting and emitting light.

• Similar to diodes, LEDs are current-dependent devices.
– LED brightness is controlled by controlling current through LED.
• Too little current through LED  LED remains OFF.
• Small current through LED  dimly lit LED.
• Large current through LED  brightly lit LED.
• Too much current through LED  LED is destroyed.
• A resistor placed in series with LED accomplishes current control.

Optoelectronics

• Light emitting electronic devices: ones that generate electromagnetic energy under the action of electrical field.
Example: light emitting diodes (visible and infrared light).

• Light detecting devices: ones that transform electromagnetic energy input into   electrical current/voltage.
Examples:  photo-resistors, photo-diodes,  photo-transistors, etc.

The MOSFET (Metal Oxide Semiconductor FET)

The MOSFET (Metal Oxide Semiconductor FET) differs from the JFET in that it has an insulated gate instead of a pn junction between the gate and channel.
Like JFETs, MOSFETs have a conductive channel with the source and drain connections on it.

Channel current is controlled by the gate voltage. The required gate voltage depends on the type of MOSFET.


The field-effect transistor (FET)

The field-effect transistor (FET) is a voltage controlled device where gate voltage controls drain current. There are two types of FETs – the JFET and t he MOSFET.


JFETs have a conductive channel with a source and drain connection on the ends. Channel current is controlled by the gate voltage.

The gate is always operated with reverse bias on the pn junction formed between the gate and the channel. As the reverse bias is increased, the channel current decreases.


Bipolar junction transistors (BJTs)

The BJT is a transistor with three regions and two pn junctions. The regions are named the emitter, the base, and the collector and each is connected to a lead.

There are two types of BJTs – npn and pnp.


Zener Diodes

A Zener diode is a type of diode that permits current not only in the forward direction like a normal diode, but also in the reverse direction if the voltage is larger than the breakdown voltage known as "Zener knee voltage" or "Zener voltage". The device was named after Clarence Zener, who discovered this electrical property.

A conventional solid-state diode will not allow significant current if it is reverse-biased below its reverse breakdown voltage. When the reverse bias breakdown voltage is exceeded, a conventional diode is subject to high current due to avalanche breakdown. Unless this current is limited by circuitry, the diode will be permanently damaged. In case of large forward bias (current in the direction of the arrow), the diode exhibits a voltage drop due to its junction built-in voltage and internal resistance. The amount of the voltage drop depends on the semiconductor material and the doping concentrations.

A Zener diode exhibits almost the same properties, except the device is specially designed so as to have a greatly reduced breakdown voltage, the so-called Zener voltage. By contrast with the conventional device, a reverse-biased Zener diode will exhibit a controlled breakdown and allow the current to keep the voltage across the Zener diode at the Zener voltage. For example, a diode with a Zener breakdown voltage of 3.2 V will exhibit a voltage drop of 3.2 V even if reverse bias voltage applied across it is more than its Zener voltage. The Zener diode is therefore ideal for applications such as the generation of a reference voltage (e.g. for an amplifier stage), or as a voltage stabilizer for low-current applications.

The Zener diode's operation depends on the heavy doping of its p-n junction allowing electrons to tunnel from the valence band of the p-type material to the conduction band of the n-type material. In the atomic scale, this tunneling corresponds to the transport of valence band electrons into the empty conduction band states; as a result of the reduced barrier between these bands and high electric fields that are induced due to the relatively high levels of dopings on both sides. The breakdown voltage can be controlled quite accurately in the doping process. While tolerances within 0.05% are available, the most widely used tolerances are 5% and 10%. Breakdown voltage for commonly available zener diodes can vary widely from 1.2 volts to 200 volts.

Another mechanism that produces a similar effect is the avalanche effect as in the avalanche diode. The two types of diode are in fact constructed the same way and both effects are present in diodes of this type. In silicon diodes up to about 5.6 volts, the Zener effect is the predominant effect and shows a marked negative temperature coefficient. Above 5.6 volts, the avalanche effect becomes predominant and exhibits a positive temperature coefficient[1]. In a 5.6 V diode, the two effects occur together and their temperature coefficients neatly cancel each other out, thus the 5.6 V diode is the component of choice in temperature-critical applications. Modern manufacturing techniques have produced devices with voltages lower than 5.6 V with negligible temperature coefficients, but as higher voltage devices are encountered, the temperature coefficient rises dramatically. A 75 V diode has 10 times the coefficient of a 12 V diode.

What is Semiconductor ?

 A semiconductor is a substance, usually a solid chemical element or compound, that can conduct electricity under some conditions but not others, making it a good medium for the control of electrical current. Its conductance varies depending on the current or voltage applied to a control electrode, or on the intensity of irradiation by infrared (IR), visible light, ultraviolet (UV), or X rays.

The specific properties of a semiconductor depend on the impurities, or dopants, added to it. An N-type semiconductor carries current mainly in the form of negatively-charged electrons, in a manner similar to the conduction of current in a wire. A P-type semiconductor carries current predominantly as electron deficiencies called holes. A hole has a positive electric charge, equal and opposite to the charge on an electron. In a semiconductor material, the flow of holes occurs in a direction opposite to the flow of electrons.

Elemental semiconductors include antimony, arsenic, boron, carbon, germanium, selenium, silicon, sulfur, and tellurium. Silicon is the best-known of these, forming the basis of most integrated circuits (ICs). Common semiconductor compounds include gallium arsenide, indium antimonide, and the oxides of most metals. Of these, gallium arsenide (GaAs) is widely used in low-noise, high-gain, weak-signal amplifying devices.

A semiconductor device can perform the function of a vacuum tube having hundreds of times its volume. A single integrated circuit (IC), such as a microprocessor chip, can do the work of a set of vacuum tubes that would fill a large building and require its own electric generating plant.

 
Remember

• Materials that permit flow of electrons are called conductors (e.g., gold, silver, copper, etc.).
• Materials that block flow of electrons are called insulators (e.g., rubber, glass, Teflon, mica, etc.).
• Materials whose conductivity falls between those of conductors and insulators are called semiconductors.
• Semiconductors are  “part-time” conductors whose conductivity can be controlled.

• Silicon is the most common material used to build semiconductor devices.
• Si is the main ingredient of sand and it is estimated that a cubic mile of seawater contains 15,000 tons of Si.
• Si is spun and grown into a crystalline structure and cut into wafers to make
electronic devices.

• Atoms in a pure silicon wafer contains four electrons in outer orbit (called valence electrons).
– Germanium is another semiconductor material with four valence electrons.
• In the crystalline lattice structure of Si, the valence electrons of every Si atom are locked up in covalent bonds with the valence electrons of four neighboring Si atoms.
– In pure form, Si wafer does not contain any free charge carriers.
– An applied voltage across pure Si wafer does not yield electron flow through the wafer.
– A pure Si wafer is said to act as an insulator.
• In order to make useful semiconductor devices, materials such as phosphorus (P) and boron (B) are added to Si to change Si’s conductivity.




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